Atomic Layer Etching Tool
The Atomic Layer Plasma Etching Tool will enable etching in ICP, RIE and ALE mode of metals, oxides and Silicon and polymers both for micro / nano system fabrication. The emphasis is on metals and nanoscale etching however, deep Silicon and polymer etching will be also provided.
Some Key features of the tool:
- One chamber with ICP, RIE, ALE capability with loadlock for both corrosive gas chemistry for metal etching and for deep Si and polymer etching for MEMS
- Bias RF power at least 300W.
- For the ALE system/chamber, ability to control the bias at low power within at least 3% of the applied value for power values higher than 50W. For power values from 1-50W ability to control with accuracy of 1W, so that the bias is controlled with accuracy in the range of 1V.
- ICP RF power at least 1000W.
- Metals to be etched are: Al, Cr, Si and polysilicon, Cu, adhesion metals such as Ti, Cr and Barrier metals such as Ni, Co, Ru. Noble metals such as Au, Pt, Pd, Ag.
- Oxides to be etched: SiO2, ZnO, TiO2, SnO, Indium Tin Oxide ITO, CrO, NiO, Al2O3 (ALD deposited γ-Al2O3), HfO2, ZrO2, Y2O3, Ta2O5, WO3, MoO3, and Silicon Carbide SiC.
- Nitrides, Sulfides and other Compounds: Si3N4, TaN, TiN, AlN, HfN, GaN, AlGaN, MoS2, WS2, MoTe2, MoSe2.
- Polymer film and polymer plate Etching, as well as etching of organic materials.
[ https://plasma.oxinst.com/products/ale/plasmapro-100-ale ]
